breakdown voltage

With increase of infiltration temperature, the amount of CrW solute increases, which leads to the increase in hardness and breakdown voltage, but the decrease of electrical conductivity and chopping current on the condition of the same Cr content in the CrW/ Cu composites.

CrW/Cu复合材料中，对Cr含量相同的配比，随着熔渗温度的升高，基体中CrW固溶体增多，材料的硬度、耐电压强度升高，电导率、截流水平则降低。

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Features: High breakdown voltage, low collector saturation voltage, high speed switching.

特点: 击穿电压高, 饱和压降低, 开关速度快.

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Features: High breakdown voltage, excellent current characteristics.

特点: 击穿电压高, 电流特性好.

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In uniform filed , breakdown voltage changed more , but less change in non-uniform field.

在非均匀电场中, 击穿电压提高不明显.

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Purpose: Color TV chroma output and high breakdown voltage driver.

用途: 用于彩电行输出和高击穿电压驱动.

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Features: High breakdown voltage , high current, low saturation voltage.

特点: 高电压, 大电流, 低饱和压降.

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The deposition rate, morphologies, breakdown voltage and refractive index were studied.

研究了制备工艺对薄膜沉积速率 、 表面形貌 、 折射率和电击穿场强的影响.

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Application of avalanche noise detection as a criterion for surface breakdown mechanism of high& voltage silicon p+ pnn+ junctions

雪崩噪声鉴别法在高压硅P~+PNN~+结表面击穿机理判定中的应用

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Thus, study on predicting breakdown voltage of stator bar in generator has practical significance.

因此对发电机定子线棒击穿电压的预测具有重要意义.

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Features: High breakdown voltage, low output capacitance, high fT.

特点: 高击穿电压, 低输出电容, 特征频率高.

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The more uniform the voltage distribution is, the higher the breakdown voltage improvement factor is.

断口电压分布特性越均匀, 则击穿电压增益倍数越高.

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If the critical reverse breakdown voltage is exceeded, a destructive breakdown occurs.

如果超过临界反向击穿电压, 就会发生破坏性的击穿.

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This structure is suitable for breakdown voltage below 300 V to obtain ultra-low specific on-resistance.

在此基础上,推出了为获得击穿电压和比导通电阻最好折中的优化条件.

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Breakdown Characteristics of SOI LDMOS High Voltage Devices with Variable Low k Dielectric Layer

可变低k介质层SOI LDMOS高压器件的耐压特性

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The result showed that burying process may make breakdown voltage smaller and apparel.

结果表明,采取粉料埋烧可以明显降低压敏电压、提高介电常数.

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Features: High breakdown voltage, Low drain current.

特点: 击穿电压高, 漏电流小.

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Features: Wide ASO, low saturation voltage, high breakdown voltage.

特点: 宽阔的安全工作区; 饱和压降低;击穿电压高.

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For improving breakdown voltage ( BV_ ( gso), BV_ ( gko)), at the same time assuring good I-V characteristic, we did many experiments.

为了在尽量提高击穿BV（GSO）（BV（GKO））的同时，能够保证良好的Ⅰ-Ⅴ特性，我们做了大量的实验。

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Experiments with FCG show that voltage breakdown and fabrication tolerance causes most of the flux losses.

从FCG装置的实验中得到了FCG设计中存在的主要问题是击穿和装配公差。

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Semiconductor junctions a reverse breakdown voltage at which a reverse-biased junction begins to conduct.

当反向偏 置 形成时,半导体的连接点会有反向击穿电压.

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